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| SI6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A) 6.5 5.5 rDS(on) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View Ordering Information: SI6968BEDQ-T1 (with Tape and Reel) N-Channel S1 N-Channel S2 D 8D 7 S2 6 S2 5 G2 *300 W G1 G2 *300 W *Typical value by design ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "12 6.5 Steady State Unit V 5.2 3.5 30 A 1.0 1.0 0.64 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 5.5 1.5 1.5 0.96 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72274 S-31362--Rev. A, 30-Jun-03 www.vishay.com Steady-State Steady-State RthJA RthJF Symbol Typ 72 100 55 Max 83 120 70 Unit _C/W C/W 1 SI6968BEDQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS v 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.5 A VDS = 10 V, ID = 6.5 A IS = 1.5 A, VGS = 0 V 30 0.0165 0.023 30 0.71 1.2 0.022 0.030 0.6 1.6 "200 1 25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 12 2.2 3.6 245 330 860 510 365 495 1300 765 ns 18 nC Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 10 10,000 Gate Current vs. Gate-Source Voltage I GSS - Gate Current (mA) I GSS - Gate Current (mA) 8 1,000 100 6 10 TJ = 150_C 4 1 TJ = 25_C 2 0.1 0 0 3 6 9 12 15 18 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72274 S-31362--Rev. A, 30-Jun-03 SI6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 25 2.5 V 25 30 Transfer Characteristics I D - Drain Current (A) 20 I D - Drain Current (A) 20 15 15 10 2V 10 TC = 125_C 5 25_C - 55_C 5 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 V GS - Gate-to-Source Voltage (V) 5 VDS = 10 V ID = 6.5 A Gate Charge r DS(on) - On-Resistance ( W ) 0.05 4 0.04 3 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 2 1 0.01 0 5 10 15 20 25 30 ID - Drain Current (A) 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 6.5 A 10 I S - Source Current (A) 1.2 40 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 1.4 TJ = 150_C 1.0 TJ = 25_C 1 0.8 0.6 - 50 0.1 - 25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) Document Number: 72274 S-31362--Rev. A, 30-Jun-03 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 SI6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 0.05 0.4 ID = 250 mA r DS(on) - On-Resistance ( W ) 0.04 V GS(th) Variance (V) 0.2 Threshold Voltage 0.03 ID = 6.5 A - 0.0 0.02 - 0.2 0.01 - 0.4 0.00 0 1 2 3 4 5 6 - 0.6 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Single Pulse Power 200 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 160 10 120 I D - Drain Current (A) Power (W) 1 ms 1 10 ms 100 ms 80 40 0.1 TC = 25_C Single Pulse 1s 10 s dc 0 0.001 0.01 0.1 Time (sec) 1 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72274 S-31362--Rev. A, 30-Jun-03 SI6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72274 S-31362--Rev. A, 30-Jun-03 www.vishay.com 5 |
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